Thin-film PbSnTe:In/BaF2/CaF2/Si structures for monolithic matrix photodetectors operating in the far infrared range

被引：0

作者：

A. N. Akimov

A. V. Belenchuk

A. É. Klimov

M. M. Kachanova

I. G. Neizvestny

S. P. Suprun

O. M. Shapoval

V. N. Sherstyakova

V. N. Shumsky

机构：

[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Branch

[2] Academy of Sciences of Moldova,Institute of Electronic Engineering and Industrial Technologies

来源：

Technical Physics Letters | 2009年 / 35卷

关键词：

81.15.Hi; 85.60.Gz;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We report for the first time on the creation of 288 × 2 matrix photodetectors with an element size of 25 × 25 μm based on PbSnTe:In/BaF2/CaF2/Si structures and present their threshold characteristics. The detection ability of about 90% elements ranges from 7.2 × 1012 to 8.7 × 1012 cm Hz0.5/W at T = 21.2 K. The proposed technology opens ways to the creation of monolithic matrix photodetectors operating in the far-IR range.

引用

页码：524 / 527

页数：3

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