Raman Scattering and Backscattering Studies of Silicon Nanocrystals Formed Using Sequential Ion Implantation

被引：0
作者：
Gayatri Sahu
Rajesh Kumar
Durga Prasad Mahapatra
机构：
[1] Indian Institute of Technology,Discipline of Physics, School of Basic Sciences
[2] Indian Institute of Technology,Discipline of Surface Science and Engineering
[3] Institue of Physics,undefined
[4] Sachivalaya Marg,undefined
来源：
Silicon | 2014年 / 6卷
关键词：
Silicon nanocrystals; Raman Scattering; Ion implantation; Rutherford backscattering; Phonon confinement model;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Silicon nanocrystals were produced using a two-stage gold ion implantation technique. The first stage implantation using low energy ions led to the formation of an amorphous Si (a-Si) layer. A subsequent high energy Au irradiation in the second stage was found to produce strained Si NCs. An annealing step at a temperature as low as 500 °C was seen to result in strain free NCs. Higher temperature annealing of the samples was found to result in a growth in size from recrystallization of the a-Si matrix. Raman Scattering, X-Ray diffraction and Rutherford Backscattering Spectrometry have been used to study the effect of annealing on the samples and the size of the Si NCs formed. The data can be well explained using a phonon confinement model with an extremely narrow size distribution. The XRD results are in line with the Raman analysis.
引用
收藏
页码：65 / 71
页数：6
相关论文
共 81 条
[1]  
Soref R(2010)Silicon photonics: a review of recent literature Silicon 2 1-6
[2]  
Canham LT(1990)Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers Appl Phys Lett 57 1046-1048
[3]  
Cullis AG(1997)The structural and luminescence properties of porous silicon J Appl Phys 82 909-965
[4]  
Canham LT(1994)Absorption and emission of light in nanoscale silicon structures Phys Rev Lett 72 1514-1517
[5]  
Calcott PDJ(1999)Electronic states and luminescence in porous silicon quantum dots: the role of oxygen Phys Rev Lett 82 197-200
[6]  
Hybertsen MS(2002)Surface chemistry of silicon nanoclusters Phys Rev Lett 097401 88-91
[7]  
Wolkin MV(2001)Nanocomposites formed by ion implantation: recent developments and future opportunities Nucl Instruments Methods Phys Res Sect B Beam Interactions Mater Atoms 178 7-16
[8]  
Jorne J(2007)MeV Au irradiation induced nanoparticle formation and recrystallization in a low energy Au implanted Si layer Nanotechnology 18 495702-840
[9]  
Fauchet PM(2010)Narrow band UV emission from direct bandgap Si nanoclusters embedded in bulk Si J Phys Condens Matter 22 072203-629
[10]  
Puzder A(2012)Low-temperature UV photoluminescence of ion beam synthesized Si nanoclusters embedded in Si Adv Nat Sci Nanosci Nanotechnol 3 025002-1570
123456789