III-Nitride grating grown on freestanding HfO2 gratings

被引：0

作者：

Yongjin Wang

Tong Wu

Fangren Hu

Yoshiaki Kanamori

Hongbo Zhu

Kazuhiro Hane

机构：

[1] Nanjing University of Posts and Telecommunications,Institute of Communication Technology

[2] Tohoku University,Department of Nanomechanics

来源：

Nanoscale Research Letters | / 6卷

关键词：

InGaN/GaN QWs; fast atom beam etching; molecular beam epitaxy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We report here the epitaxial growth of III-nitride material on freestanding HfO2 gratings by molecular beam epitaxy. Freestanding HfO2 gratings are fabricated by combining film evaporation, electron beam lithography, and fast atom beam etching of an HfO2 film by a front-side silicon process. The 60-μm long HfO2 grating beam can sustain the stress change during the epitaxial growth of a III-nitride material. Grating structures locally change the growth condition and vary indium composition in the InGaN/GaN quantum wells and thus, the photoluminescence spectra of epitaxial III-nitride grating are tuned. Guided mode resonances are experimentally demonstrated in fabricated III-nitride gratings, opening the possibility to achieve the interaction between the excited light and the grating structure through guided mode resonance.

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