Recombination of silicon ions by electron capture from atomic hydrogen and helium
被引:0
作者:
M. C. Bacchus-Montabonel
论文数: 0引用数: 0
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机构:Laboratoire de Spectrométrie Ionique et Moléculaire (UMR 5579),
M. C. Bacchus-Montabonel
机构:
[1] Laboratoire de Spectrométrie Ionique et Moléculaire (UMR 5579),
[2] CNRS et Université Lyon I,undefined
[3] 43 Bd du 11 Novembre 1918,undefined
[4] 69622 Villeurbanne Cedex,undefined
[5] France,undefined
来源:
Theoretical Chemistry Accounts
|
2000年
/
104卷
关键词:
Key words: Electron capture;
Silicon ions;
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摘要:
Ab initio potential-energy curves and coupling matrix elements of the Σ and Π molecular states involved in the collision of the Si2+, Si3+ and Si4+ multicharged ions on atomic hydrogen and helium have been determined by means of configuration interaction methods. The total and partial electron capture cross sections have been determined using a semiclassical or a quantal approach in the 0.002–0.1 au velocity range. A detailed comparison with very recent theoretical and experimental rate coefficient results is made.