Transparent and passive Ta–Si–N thin films barrier layer

被引:0
作者
Alexis Harmon
Darnell Robertson
Mehran Elahi
Bijandra Kumar
Adetayo Adedeji
机构
[1] Elizabeth City State University,Department of Mathematics, Computer Science and Engineering Technology
[2] Elizabeth City State University,Department of Natural Sciences
来源
MRS Communications | 2021年 / 11卷
关键词
Thin film ; Sputtering; Diffusion; Barrier layer;
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学科分类号
摘要
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页码:950 / 954
页数:4
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[1]  
Kolawa E(1991)Diffusion barrier properties of TiW between Si and Cu Electron. Devices Lett. 12 321-1075
[2]  
Pokela P(1991)Amorphous Ta-Si-n diffusion barriers in Si/Al and Si/Cu metallization Appl. Surf. Sci. 53 373-083106
[3]  
Reid JS(1991)Characterization of Al/Ta-Si-N/Au metallization Thin Solid Films 203 259-5183
[4]  
Ruiz RP(1991)Amorphous ternary Ta-Si-N diffusion barrier between Si and Au J. Electrochem. Soc. 138 2125-undefined
[5]  
Nicolet M-A(1994)Ti-Si-N diffusion barrier between silicon and copper Electron. Devices Lett. 15 298-undefined
[6]  
Kolawa E(2000)Effect of composition on thermal stability and electrical resistivity of Ta-Si-N films Thin Solid Films 365 19-undefined
[7]  
Pokela PJ(1970)Electromigration damage in aluminum film conductors J. Appl. Phys. 41 2381-undefined
[8]  
Reid JS(1990)The formation of Cu Thin Solid Films 189 269-undefined
[9]  
Chen JS(1978)Si: marker experiments Thin Solid Films 52 415-undefined
[10]  
Nicolet M-A(1982)Diffusion barriers in thin films Thin Solid Films 96 317-undefined