Impact of AlN-aperture on optical and electrical properties of nitride VCSEL

被引：0
作者：
P. Śpiewak
A. K. Sokół
M. Wasiak
R. P. Sarzała
机构：
[1] Lodz University of Technology,Photonics Group, Institute of Physics
来源：
Optical and Quantum Electronics | 2017年 / 49卷
关键词：
VCSEL; Gallium nitride; Computer modeling;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
This paper reports a numerical analysis of nitride VCSELs with indium-tin-oxide current spreading layers and AlN apertures. The results show that the thickness, location and diameter of the AlN aperture significantly influence the optical and electrical properties of the VCSEL.
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