Solid-state phase formation between Pd thin films and GaSb

被引：0
作者：
J. A. Robinson
S. E. Mohney
机构：
[1] The Pennsylvania State University,Department of Materials Science and Engineering and Materials Research Institute
来源：
Journal of Electronic Materials | 2006年 / 35卷
关键词：
GaSb; palladium; thin films; ohmic contacts;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Knowledge of the interaction between a thin metal film and a compound semiconductor can be used to engineer electrical contacts to the semiconductor. In this study, we examine the reaction between a 50 nm layer of Pd and a GaSb substrate annealed at 100–350°C for 10–360 min using transmission electron microscopy (TEM) and x-ray diffraction (XRD). We report on the formation of Pd-rich nanocrystalline and polycrystalline ternary phases at temperatures below 200°C, followed by Pd-Ga and Pd-Sb binary phases above 200°C.
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页码：48 / 55
页数：7
相关论文
共 94 条
[21]  
Richter R.(1997)undefined Phys. Status Solidi 163 387-914
[22]  
Milnes A.G.(1988)undefined J. Mater. Res. 3 914-1540
[23]  
Polyakov A.Y.(2000)undefined Z. Anorg. Chem. 626 1540-99
[24]  
Wang S.(2001)undefined J. Cryst. Growth 316 99-147
[25]  
Robinson J.A.(1990)undefined J. Less-Common Met. 161 147-205
[26]  
Mohney S.E.(1975)undefined J. Microsc. 103 205-1198
[27]  
Bennett B.R.(1991)undefined Phys. Rev. B: Condens. Matter Mater. Phys. 43 1198-105
[28]  
Yang Z.C.(1986)undefined Thin Solid Films 136 105-undefined
[29]  
Hao P.H.(undefined)undefined undefined undefined undefined-undefined
[30]  
Wang L.C.(undefined)undefined undefined undefined undefined-undefined
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