Semiconductor III–V Nanowires: Synthesis, Fabrication and Characterization of Nanodevices

The concept of semiconductor and its vital applications around different areas have shown a new way to the scientists and researchers for developing and conducting experiments toward a better tomorrow for the industries and manufacturing units. Nanowires especially have been a key point for the researchers since last few years due to their enormous inner advantages and application in many areas such as nanoscience, optical electronics and photonics. The objective of this review paper is basically to explain regarding the fabrication process of nanodevices based on III–V nanowires. So, in this theoretical review we have explained some of the basic concepts and key features of nanowires, semiconductor materials, SSCVD growth mechanism, device applications and fabrication mechanism of single nanowire devices using EBL technique. This review paper comprises almost every aspect of III–V nanowires and how is it playing a key role in designing nanodevices. The III–V nanowire fabrication methods (especially top-down and bottom-up approach) have been explained with illustration prior to explaining the fabrication of nanodevices. © 2021, The Institution of Engineers (India).