Electrical resistivity and Hall effect in lanthanum monobismuthide in magnetic fields to 13 T

被引：0

作者：

N. N. Stepanov

N. V. Morozova

A. E. Kar’kin

A. V. Golubkov

V. V. Kaminskii

机构：

[1] Russian Academy of Sciences,Ioffe Physical

[2] Ural Branch of the Russian Academy of Sciences,Technical Institute

来源：

Physics of the Solid State | 2015年 / 57卷

关键词：

Magnetic Field; Electrical Resistivity; Lanthanum; Hall Effect; Field Dependence;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The electrical resistivity, the Hall effect, the free charge carrier mobility, and their field dependences have been studied in lanthanum monobismuthide (LaBi) over the temperature range of 1.7–300 K in magnetic fields to 13 T. For comparison, similar measurements have been performed on samples of lanthanum monotelluride (LaTe). It has been shown that LaBi is a semiconducting material with a complex structure of the conduction band.

引用

页码：2369 / 2372

页数：3

共 36 条

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