Electrical resistivity and Hall effect in lanthanum monobismuthide in magnetic fields to 13 T

被引：0
|
作者：
N. N. Stepanov
N. V. Morozova
A. E. Kar’kin
A. V. Golubkov
V. V. Kaminskii
机构：
[1] Russian Academy of Sciences,Ioffe Physical
[2] Ural Branch of the Russian Academy of Sciences,Technical Institute
来源：
Physics of the Solid State | 2015年 / 57卷
关键词：
Magnetic Field; Electrical Resistivity; Lanthanum; Hall Effect; Field Dependence;
D O I：
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学科分类号：
摘要：
The electrical resistivity, the Hall effect, the free charge carrier mobility, and their field dependences have been studied in lanthanum monobismuthide (LaBi) over the temperature range of 1.7–300 K in magnetic fields to 13 T. For comparison, similar measurements have been performed on samples of lanthanum monotelluride (LaTe). It has been shown that LaBi is a semiconducting material with a complex structure of the conduction band.
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页码：2369 / 2372
页数：3
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