Microstructure of Si Crystals Subjected to Irradiation with High-Energy H+ Ions and Heat Treatment by High-Resolution Three-Crystal X-Ray Diffraction and Transmission Electron Microscopy

被引：1

作者：

Asadchikov, V. E. ^{[1
]}

Dyachkova, I. G. ^{[1
]}

Zolotov, D. A. ^{[1
]}

Chukhovskii, F. N. ^{[1
]}

Sorokin, L. M. ^{[2
]}

机构：

[1] Russian Acad Sci, Fed Res Ctr Crystallog & Photon, Shubnikov Inst Crystallog, Moscow 117333, Russia

[2] Ioffe Inst, St Petersburg 194021, Russia

来源：

PHYSICS OF THE SOLID STATE | 2019年 / 61卷 / 10期

关键词：

silicon; hydrogen ions; three-crystal X-ray diffractometry; transmission electron microscopy; post-implantation annealing; and radiation defects; HUANG SCATTERING; SILICON; DEFECTS;

D O I：

10.1134/S1063783419100068

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The structural features of the formation of radiation defects in proton-implanted layers of silicon plates during their heat treatment have been studied. New data on the nature, the characteristics, and the microdefect concentration in Si crystals irradiated with protons with energies 100 + 200 + 300 keV with the total dose 2 x 10(16) cm(-2) and the evolution of the defect structure during heat treatment have been obtained by high-resolution three-crystal X-ray diffraction and transmission electron microscopy over wide temperature range from 200 to 1100 degrees C.

引用

页码：1707 / 1715

页数：9

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