Passivating gallium arsenide surface by gallium chalcogenide

被引：0

作者：

N. N. Bezryadin

G. I. Kotov

S. V. Kuzubov

I. N. Arsent’ev

I. S. Tarasov

A. A. Starodubtsev

A. B. Sysoev

机构：

[1] Voronezh State Technical Academy,Ioffe Physicotechnical Institute

[2] Russian Academy of Sciences,undefined

来源：

Technical Physics Letters | 2008年 / 34卷

关键词：

81.65.-b; 68.35.-p; 68.35.Bs;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have studied the protective properties of thin films of gallium selenide formed by the method of heterovalent substitution on the surface of GaAs substrates. The data of transmission (Hitachi H-800) and scanning (JEOL JSM-638 OLV) electron microscopy showed that GaAs substrates treated with selenium vapor produced a more pronounced orienting action on the subsequent deposition of GaAs as compared to the substrates covered with a natural oxide. The processing of a GaAs substrate in selenium vapor followed by the removal of the resulting Ga2Se3 layer increases the degree of smoothness of the substrate surface on the atomic level.

引用

页码：428 / 430

页数：2

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