Electrical Properties of Electrochemically Grown Thin Sb2Se3 Semiconductor Films

被引：0
|
作者：
V. A. Majidzade
A. Sh. Aliyev
I. Qasimogli
P. H. Quliyev
D. B. Tagiyev
机构：
[1] Nagiyev Institute of Catalysis and Inorganic Chemistry,
[2] Academy of Sciences of Azerbaijan,undefined
[3] Abdullaev Institute of Physics,undefined
[4] Academy of Sciences of Azerbaijan,undefined
[5] Nakhchivan State University,undefined
[6] University Campus,undefined
来源：
Inorganic Materials | 2019年 / 55卷
关键词：
polarization; electrodeposition; electrical conductivity; resistance; heat treatment;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Abstract—We have studied some of the electrical properties of thin Sb2Se3 semiconductor films produced by electrodeposition from tartrate electrolytes. The films have been shown to have n-type conductivity. In addition, we have determined some of their semiconductor constants: temperature sensitivity coefficient (B = 15 100 K), temperature coefficient of resistance (α = 0.167 K–1 at 300 K and 0.094 K–1 at 400 K), and band gap (Eg = 1.3 eV). The present results demonstrate that thin Sb2Se3 films can be used in solar cells and thermoelectric elements.
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页码：979 / 983
页数：4
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