Effect of thermal treatment on the electrotransport properties of thin-film In2O3, ZnO materials and the multilayer (In2O3/ZnO)83 heterostructure

被引：1

作者：

Babkina I.V. ^{[1
]}

Gabriel’s K.S. ^{[1
]}

Epryntseva T.I. ^{[1
]}

Zhilova O.V. ^{[1
]}

Makagonov V.A. ^{[1
]}

Sitnikov A.V. ^{[1
]}

Hlopovskikh P.M. ^{[1
]}

机构：

[1] Voronezh State Technical University, Voronezh

来源：

Bulletin of the Russian Academy of Sciences: Physics | 2016年 / 80卷 / 9期

关键词：

D O I：

10.3103/S1062873816090045

中图分类号：

学科分类号：

摘要：

The effect heat treatment has on the electrotransport mechanisms in films of ZnO and In2O3, and in a multilayer (In2O3/ZnO)83 structure obtained via ion-beam sputtering, is studied. It is shown that there is a mechanism of weak electron localization in the In2O3 and (In2O3/ZnO)83 samples. The relaxation processes that occur during the heat treatment of In2O3 films are found to increase the length of elastic electron scattering, but to reduce this parameter in multilayer heterostructures. © 2016, Allerton Press, Inc.

引用

页码：1168 / 1171

页数：3

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