Silicon readout ICs for third-generation 2D IR focal-plane arrays operating over the wavelength range 8–12 μm

被引：1

作者：

I. I. Lee

机构：

[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Branch

来源：

Russian Microelectronics | 2008年 / 37卷 / 2期

关键词：

85.40.-e;

D O I：

10.1134/S1063739708020054

中图分类号：

学科分类号：

摘要：

A new design is described of silicon readout IC for 2D long-wavelength hybrid IR focal-plane arrays. Its essential feature is that the input array is made up of 2 × 2 subarrays of cells. This provides an almost tenfold increase in charge-handling capacity, a major parameter of the readout ICs considered. The design also includes an adaptive digital preprocessing unit in on-chip form.

引用

页码：114 / 120

页数：6

共 2 条

[1] Silicon readout ICs for third-generation 2D IR focal-plane arrays operating over the wavelength range 8-12 μm
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
Russ. Microelectr., 2008, 2 (114-120):
[2] A 0.18μm CMOS 1000 frames/sec, 138dB dynamic range readout circuit for 3D-1C IR focal plane arrays
Kavusi, Sam
Ghosh, Kunal
Fife, Keith
El Gamal, Abbas
PROCEEDINGS OF THE IEEE 2006 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2006, : 229 - 232

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