Defects in a-Si:H films induced by Si ion implantation

Undoped a-Si:H films implanted with silicon ions (dose 1012–1014 cm−2, mean energy ɛ=60 keV) at room temperature have been studied. The following results of the interaction of such films with ion beams have been established: formation of defects (dangling Si-Si bonds) in the neutral state (D0), change in the charge state D0→D−, the a-Si:H→a-Si transition, and growth of inhomogeneity of the structure. It is shown that these effects depend on the initial structures and electronic characteristics of the films.