Photoelectric phenomena in ZnO(ITO)/a-Si:H(n)/c-Si(p)/Al solar cells

Solar cells Al/ZnO/a-Si:H(n)/c-Si(p)/Al and Al/ITO/a-Si:H(n)/c-Si(p)/Al were fabricated on single-crystal Si substrates. The photoelectric properties of these solar cells were investigated under exposure to natural and linearly polarized radiation at T=300 K. The polarization photosensitivity of the solar cells, which emerges under the conditions of oblique incidence of linearly polarized radiation, was observed. The origin of the induced photopleochroism of solar cells with ZnO and ITO antireflection coatings is ascertained. The oscillations in the spectrum of the induced photopleochroism, which are associated with interference phenomena in oxide films, are observed. The results obtained point to the possibility of using the solar cells as selective photosensors. At the same time, polarization spectroscopy can ensure effective monitoring of the antireflection coatings of solar cells.