Detector-grade CdZnTe:In crystals obtained by annealing

被引：0
作者：
Pengfei Yu
Wanqi Jie
Tao Wang
机构：
[1] Northwestern Polytechnical University,State Key Laboratory of Solidification Processing
[2] Northwestern Polytechnical University,School of Materials Science and Engineering
来源：
Journal of Materials Science | 2011年 / 46卷
关键词：
Radiation Detector; Cadmium Zinc Telluride; Good Detector Performance; TeCd; Deep Donor Level;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A method for successfully obtaining detector-grade CdZnTe:In (CZT:In) crystals by annealing is described in this article. Pure Te is used as annealing source, which can provide sufficient deep-level Te antisites. Characterizations reveal that the resistivity is greatly enhanced by more than five orders after this annealing, thus the crystals can be use for radiation detectors. This is due to introduce efficient Te antisites to pin the Fermi level to the middle of the band gap. The EPD of dislocation reduces because the star-like Cd inclusions are eliminated by annealing. Investigation of annealing time shows that 240 h annealed CZT:In crystal with 7.8% energy resolution and 2.01×10−3 cm2/V μτ value has the best detector performance.
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页码：3749 / 3752
页数：3
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