Growth of GaxIn1 − xSb solid solution single crystals by the Czochralski method

被引：0

作者：

G. N. Kozhemyakin

R. V. Ruban

M. A. Rom

M. E. Golovkova

机构：

[1] The V. Dal Eastern Ukrainian National University,Institute for Single Crystals

[2] National Academy of Sciences of Ukraine,Frantsevich Institute for Problems of Materials Science

[3] National Academy of Sciences of Ukraine,undefined

来源：

Crystallography Reports | 2009年 / 54卷

关键词：

72.80.Ey; 61.72.Ff; 61.72.uj; 81.10.Aj; 81.10.Fq;

D O I：

暂无

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学科分类号：

摘要：

GaxIn1 − xSb solid solution single crystals (x = 0.03–0.09) have been grown. The dislocation density and electrophysical parameters are measured. A technique for the growth GaxIn1 − xSb single crystals by the Czochralski method with GaSb polycrystal feed is developed. The conditions for the growth Ga0.08In0.92Sb single crystals with a more homogeneous distribution of Ga along the bulk are determined.

引用

页码：712 / 716

页数：4