Influence of the Growth Conditions and Doping Level on the Luminescence Kinetics of Ge:Sb Layers Grown on Silicon

被引：0

作者：

D. V. Yurasov

N. A. Baídakova

A. N. Yablonskiy

A. V. Novikov

机构：

[1] Institute for Physics of Microstructures,

[2] Russian Academy of Sciences,undefined

[3] Lobachevsky State University of Nizhny Novgorod,undefined

来源：

Semiconductors | 2020年 / 54卷

关键词：

silicon; germanium; doping; time-resolved photoluminescence spectroscopy; recombination; the charge-carrier lifetime;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：811 / 816

页数：5

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