Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition

被引:0
作者
I. S. Virt
I. O. Rudyi
I. Ye. Lopatynskyi
Yu. Dubov
Y. Tur
E. Lusakowska
G. Luka
机构
[1] Drogobych State Pedagogical University,Lviv Polytechnic
[2] University of Rzeszow,undefined
[3] National University,undefined
[4] Ivan Franko Lviv National University,undefined
[5] Institute of Physics PAS,undefined
来源
Journal of Electronic Materials | 2017年 / 46卷
关键词
Lead chalcogenides; film structure; pulsed laser deposition;
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学科分类号
摘要
Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition (PLD). The films were grown on single crystal substrates (Si, KCl, Al2O3) and on Si covered with a Si3N4 buffer layer. The Si3N4 layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si3N4 was studied by means of the power spectral density analysis. Different growth modes, ranging from plasma plume condensation to bulk diffusion, resulting in observed film morphologies were identified. The investigations were complemented by electrical characterization of the chalcogenide films.
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页码:175 / 181
页数:6
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