Impact of Drain Underlap and High Bandgap Strip on Cylindrical Gate All Around Tunnel FET and its Influence on Analog/RF Performance

This paper comprises of design and analysis of novel gate all around (GAA) cylindrical tunnel field effect transistor (TFET) using technology computer aided designing (TCAD) tool. The device designing incorporates drain underlap (DU) and high band-gap strip (HBS) at drain-channel junction. The purpose of DU is to minimize the drain induced influenced short channel effects (SCEs). While, the HBS is used to decrease the tunneling of carriers from channel-drain interface, which will result suppressed OFF-current (IOFF)\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$(I_{OFF})$$\end{document}. The analysis of analog/RF parameters of proffered TFET device is carried out in terms of drain current profile, subthreshold swing (SS), parasitic capacitance, transconductance (gm)\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$(g_m)$$\end{document}, cut-off frequency (fT)\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$(f_T)$$\end{document}, maximum oscillation frequency (fmax)\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$(f_{max})$$\end{document}, and gain bandwidth (GBW).