Excitation of Er3+ ions in SiO2 with Si nanocrystals

被引：0
|
作者：
A. A. Prokofiev
A. S. Moskalenko
I. N. Yassievich
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] Martin-Luther-Universität Halle-Wittenberg,Institut für Physik
来源：
Semiconductors | 2008年 / 42卷
关键词：
73.22.Lp; 72.80.Ga; 61.72.Yx; 81.07.Ta;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Probabilities of excitation of erbium ions via Coulomb interaction with carriers localized in silicon nanocrystals embedded in SiO2, in recombination and intraband relaxation of these carriers, have been calculated.
引用
收藏
页码：971 / 979
页数：8
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