The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer

被引：0

作者：

X.Y. Chen

K.H. Wong

C.L. Mak

J.M. Liu

X.B. Yin

M. Wang

Z.G. Liu

机构：

[1] National Laboratory of Solid State Microstructures Physics Nanjing University,

[2] Nanjing 210093,undefined

[3] P.R. China,undefined

[4] Department of Applied Physics,undefined

[5] The Hong Kong Polytechnic University,undefined

[6] Hung Hom,undefined

[7] Kowloon,undefined

[8] Hong Kong,undefined

[9] Department of Materials Science and Engineering,undefined

[10] Nanjing University,undefined

[11] Nanjing 210093,undefined

[12] P.R. China,undefined

来源：

Applied Physics A | 2002年 / 75卷

关键词：

PACS: 68.55.Jk; 81.15.Fg; 81.05.Cy;

D O I：

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学科分类号：

摘要：

Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO3 (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find that that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111) and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented, (100)-oriented and polycrystalline LNO, respectively.

引用

页码：545 / 549

页数：4