Calculation of Auger Lifetimes in HgCdTe

被引:0
作者
Francesco Bertazzi
Michele Goano
Enrico Bellotti
机构
[1] Boston University,ECE Department
[2] Dipartimento di Elettronica and IEIIT-CNR,undefined
[3] Politecnico di Torino,undefined
来源
Journal of Electronic Materials | 2011年 / 40卷
关键词
Auger recombination; HgCdTe; avalanche photodiodes; Monte Carlo transport simulation;
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摘要
Band-to-band Auger recombination mechanisms in HgCdTe are investigated as functions of temperature in the small modulation limit by using realistic electronic structures obtained by empirical pseudopotential calculations and their corresponding wavevector-dependent dielectric functions. The calculated Auger lifetimes are compared with the semiempirical Beattie-Landsberg-Blakemore (BLB) model, which has been extensively employed to reproduce experimental data. The Auger-1 lifetime can be fitted well to the BLB model with a constant overlap integral |F1F2| = 0.16, near the lower limit of the range reported in the literature. The role of the Auger-7 process in p-type HgCdTe is also investigated and the ratio γ between the intrinsic Auger-7 and Auger-1 lifetimes is found to be about 10.
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页码:1663 / 1667
页数:4
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