Direct angle resolved photoemission spectroscopy and superconductivity of strained high-Tc films

被引:0
作者
Davor Pavuna
Daniel Ariosa
Dominique Cloetta
Claudia Cancellieri
Mike Abrecht
机构
[1] Ecole Polytechnique Fédérale de Lausanne (EPFL),Institute of Physics of Complex Matter, FSB
[2] University of Wisconsin,Synchrotron Radiation Center
来源
Pramana | 2008年 / 70卷
关键词
Condensed matter physics; high-; superconductivity; electronic properties; photoemission spectroscopy; angle resolved photoemission spectroscopy; cuprates; films; strain; pulsed laser deposition; 73.50.-h; 74.72.-h;
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中图分类号
学科分类号
摘要
Since 1997 we systematically perform direct angle resolved photoemission spectroscopy (ARPES) on in-situ grown thin (<30 nm) cuprate films. Specifically, we probe low-energy electronic structure and properties of high-Tc superconductors (HTSC) under different degrees of epitaxial (compressive vs. tensile) strain. In overdoped and underdoped in-plane compressed (the strain is induced by the choice of substrate) ≈15 nm thin La2 − xSrxCuO4 (LSCO) films we almost double Tc to 40 K, from 20 K and 24 K, respectively. Yet the Fermi surface (FS) remains essentially two-dimensional. In contrast, ARPES data under tensile strain exhibit the dispersion that is three-dimensional, yet Tc drastically decreases. It seems that the in-plane compressive strain tends to push the apical oxygen far away from the CuO2 plane, enhances the two-dimensional character of the dispersion and increases Tc, while the tensile strain acts in the opposite direction and the resulting dispersion is three-dimensional. We have established the shape of the FS for both cases, and all our data are consistent with other ongoing studies, like EXAFS. As the actual lattice of cuprates is like a ‘Napoleon-cake’, i.e. rigid CuO2 planes alternating with softer ‘reservoir’, that distort differently under strain, our data rule out all oversimplified two-dimensional (rigid lattice) mean field models. The work is still in progress on optimized La-doped Bi-2201 films with enhanced Tc.
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页码:237 / 243
页数:6
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