Research on Memristor Effect in Crossbar Architecture for Neuromorphic Artificial Intelligence Systems

被引：0

作者：

Polyakova V.V. ^{[1
]}

Saenko A.V. ^{[1
]}

Kotz I.N. ^{[1
]}

Kovalev A.V. ^{[1
]}

机构：

[1] Institute of Nanotechnologies of Electronics and Equipment Engineering, Southern Federal University, Taganrog

来源：

Russian Microelectronics | 2024年 / 53卷 / 01期

基金：

俄罗斯科学基金会;

关键词：

atomic force microscopy; crossbar architecture; magnetron sputtering; memristor; neuromorphic systems;

D O I：

10.1134/S1063739723600255

中图分类号：

学科分类号：

摘要：

Abstract: This article presents the results of experimental studies of structures formed based on the crossbar architecture of memristor structures made of various materials. TiO2 is used as the working memristor layer. The following materials are used for the contact pads: Al, Ni, Cr, Mo, Ta, and Ag. In the course of experimental studies, the optimal combination of materials for the formation of crossbar memristor structures is revealed, which in the future can be used in devices of neuromorphic artificial intelligence systems. © Pleiades Publishing, Ltd. 2024. ISSN 1063-7397, Russian Microelectronics, 2024, Vol. 53, No. 1, pp. 85–90. Pleiades Publishing, Ltd., 2024.

引用

页码：85 / 90

页数：5

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