Low-temperature molecular-beam epitaxy of GaAs: Effect of excess arsenic on the structure and properties of the GaAs layers

被引：6

作者：

Lavrent’eva L.G. ^{[1
]}

Vilisova M.D. ^{[1
,2
]}

Preobrazhenskii V.V. ^{[3
]}

Chaldyshev V.V. ^{[4
]}

机构：

[1] V. D. Kuznetsov Siberian Physical-Technical Institute, Tomsk State University

[2] Institute of Semiconductor Physics of the Siberian Branch, Russian Academy of Sciences

[3] A. F. Ioffe Physical-Technical Institute, Russian Academy of Sciences

来源：

Russian Physics Journal | 2002年 / 45卷 / 8期

关键词：

Arsenic; Solid Solution; GaAs; Material Structure; Epitaxial Growth;

D O I：

10.1023/A:1021965211576

中图分类号：

学科分类号：

摘要：

The present paper reviews works devoted to control over the properties of epitaxial GaAs by incorporation of excess (non-stoichiometric) arsenic into the GaAs films grown by molecular-beam epitaxy (MBE) at low-temperature (LT). The effect of excess arsenic on the material structure and properties is analyzed for both as-grown and annealed LT-GaAs layers. The effect of doping on the incorporation of excess arsenic is also examined. The data on the effect of excess arsenic on the properties of the Ga0.47In0.53As solid solution are presented. The specific features of the mechanism of the excess arsenic incorporation into the solid phase during the low-temperature epitaxial growth are discussed. ©2002 Plenum Publishing Corporation.

引用

页码：735 / 752

页数：17

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