Low-temperature molecular-beam epitaxy of GaAs: Effect of excess arsenic on the structure and properties of the GaAs layers

被引：6
|
作者：
Lavrent’eva L.G. [1 ]
Vilisova M.D. [1 ,2 ]
Preobrazhenskii V.V. [3 ]
Chaldyshev V.V. [4 ]
机构：
[1] V. D. Kuznetsov Siberian Physical-Technical Institute, Tomsk State University
[2] Institute of Semiconductor Physics of the Siberian Branch, Russian Academy of Sciences
[3] A. F. Ioffe Physical-Technical Institute, Russian Academy of Sciences
来源：
Russian Physics Journal | 2002年 / 45卷 / 8期
关键词：
Arsenic; Solid Solution; GaAs; Material Structure; Epitaxial Growth;
D O I：
10.1023/A:1021965211576
中图分类号：
学科分类号：
摘要：
The present paper reviews works devoted to control over the properties of epitaxial GaAs by incorporation of excess (non-stoichiometric) arsenic into the GaAs films grown by molecular-beam epitaxy (MBE) at low-temperature (LT). The effect of excess arsenic on the material structure and properties is analyzed for both as-grown and annealed LT-GaAs layers. The effect of doping on the incorporation of excess arsenic is also examined. The data on the effect of excess arsenic on the properties of the Ga0.47In0.53As solid solution are presented. The specific features of the mechanism of the excess arsenic incorporation into the solid phase during the low-temperature epitaxial growth are discussed. ©2002 Plenum Publishing Corporation.
引用
收藏
页码：735 / 752
页数：17
相关论文
共 50 条
  • [1] LOW-TEMPERATURE LIMITS TO MOLECULAR-BEAM EPITAXY OF GAAS
    MIRIN, RP
    IBBETSON, JP
    MISHRA, UK
    GOSSARD, AC
    APPLIED PHYSICS LETTERS, 1994, 65 (18) : 2335 - 2337
  • [2] THE ROLE OF AS IN MOLECULAR-BEAM EPITAXY GAAS-LAYERS GROWN AT LOW-TEMPERATURE
    LILIENTALWEBER, Z
    COOPER, G
    MARIELLA, R
    KOCOT, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04): : 2323 - 2327
  • [3] Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy
    Lavrentieva L.G.
    Vilisova M.D.
    Bobrovnikova I.A.
    Ivonin I.V.
    Preobrazhenskii V.V.
    Chaldyshev V.V.
    Russian Physics Journal, 2006, 49 (12) : 1334 - 1343
  • [4] ARSENIC PRECIPITATES AND THE SEMI-INSULATING PROPERTIES OF GAAS BUFFER LAYERS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY
    WARREN, AC
    WOODALL, JM
    FREEOUF, JL
    GRISCHKOWSKY, D
    MCINTURFF, DT
    MELLOCH, MR
    OTSUKA, N
    APPLIED PHYSICS LETTERS, 1990, 57 (13) : 1331 - 1333
  • [5] THE ELECTRICAL BREAKDOWN PROPERTIES OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE
    LUO, JK
    THOMAS, H
    MORGAN, DV
    WESTWOOD, D
    WILLIAMS, RH
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (12) : 2199 - 2204
  • [6] Spatial ordering of arsenic clusters in GaAs layers grown by molecular-beam epitaxy at low temperature
    Bert, NA
    Chaldyshev, VV
    Lubyshev, DI
    Preobrazhenskii, VV
    Semyagin, BR
    SEMICONDUCTORS, 1995, 29 (12) : 1170 - 1171
  • [7] APPLICATIONS OF GAAS GROWN AT A LOW-TEMPERATURE BY MOLECULAR-BEAM EPITAXY
    MISHRA, UK
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 22 (01): : 72 - 77
  • [8] Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs
    V. V. Preobrazhenskii
    M. A. Putyato
    B. R. Semyagin
    Semiconductors, 2002, 36 : 837 - 840
  • [9] Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs
    Preobrazhenskii, VV
    Putyato, MA
    Semyagin, BR
    SEMICONDUCTORS, 2002, 36 (08) : 837 - 840
  • [10] STRUCTURE AND ORIENTATION OF AS PRECIPITATES IN GAAS GROWN AT LOW-TEMPERATURE BY MOLECULAR-BEAM EPITAXY
    CLAVERIE, A
    LILIENTALWEBER, Z
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1992, 65 (04): : 981 - 1002
12345