Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells

被引：0
|
作者：
M. Ya. Vinnichenko
L. E. Vorobjev
D. A. Firsov
M. O. Mashko
R. M. Balagula
G. Belenky
L. Shterengas
G. Kipshidze
机构：
[1] Saint Petersburg State Polytechnical University,Department of Electrical and Computer Engineering
[2] State University of New York at Stony Brook,undefined
来源：
Semiconductors | 2013年 / 47卷
关键词：
Carrier Concentration; Quantum Well; Optical Phonon; Laser Structure; Current Dependence;
D O I：
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中图分类号：
学科分类号：
摘要：
The current dependences of spontaneous luminescence in mid-IR injection lasers with InGaAsSb/InAlGaAsSb quantum wells are experimentally studied in the subthreshold and lasing modes. The current dependence of the carrier concentration is determined using the current dependence of the total spontaneous luminescence. A lack of carrier concentration saturation with current in the lasing mode was observed. It is shown that this can be due to carrier heating at low quantum-confinement levels and an increase in light absorption by free holes in the waveguide.
引用
收藏
页码：1513 / 1516
页数：3
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