Theoretical Study and Simulations of an InGaN Dual-Junction Solar Cell

被引:0
作者
A. Mesrane
A. Mahrane
F. Rahmoune
A. Oulebsir
机构
[1] Université M’hamed Bougara de Boumerdès,Laboratoire LIMOSE
[2] Centre de Développement des Energies Renouvelables (CDER),Unité de Développement des Equipements Solaires(UDES)
[3] USTHB,Laboratoire d’Electronique Quantique, Faculté de Physique
来源
Journal of Electronic Materials | 2017年 / 46卷
关键词
Band gap combination; dual-junction solar cell; InGaN; current match; efficiency;
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学科分类号
摘要
This study aims to determine the optimal configuration of the dual-junction InGaN solar cell. Several parameters of the dual-InGaN-junction solar cell have been investigated as the band gap combination and the thicknesses of the layers. Physical models and the optical properties of the InxGa1−xN according to the indium content have been used. The dual-junction solar cell has been designed and simulated for each chosen band gap combination. The current densities drawn from the sub-cells were matched by adjusting their emitter layers thicknesses. The best conversion efficiency obtained for the optimized dual-junction In0.49Ga0.51N/In0.74Ga0.26N solar cell, under standard conditions, was 34.93% which corresponds to the band gap combination of 1.73 eV/1.13 eV. The short-circuit current density and the open circuit voltage obtained from the tandem cell In0.49Ga0.51N/In0.74Ga0.26N are respectively, 21.3941 mA/cm2 and 1.9144 V. The current mismatch was 0.057%. The effects of the front and back layers thicknesses of the top and bottom cells on the efficiency were also studied. Furthermore, the electrical characteristics of the dual-junction solar cell and its sub-cells were also discussed.
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页码:1458 / 1465
页数:7
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