Investigation of gas sensor based on In2O3:Ga2O3 film

被引：0
作者：
M. S. Aleksanyan
V. M. Arakelyan
V. M. Aroutiounian
G. E. Shahnazaryan
机构：
[1] Yerevan State University,
来源：
Journal of Contemporary Physics (Armenian Academy of Sciences) | 2011年 / 46卷
关键词：
gas sensor; In; O; :Ga; O; film; magnetron sputtering; sensitivity;
D O I：
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中图分类号：
学科分类号：
摘要：
We have fabricated a LPG and butane sensor whose sensitive element is a nanosize In2O3:Ga2O3 (96:4 weight %) film covered with a thin palladium catalytic layer. Technology of deposition of these films on a glassceramic substrate by the method of rf magnetron sputtering was elaborated. The surfaces of fabricated films were studied with use of a scanning electron microscope and the thickness of films was measured. The sensitivity of sensors based on the glassceramic/In2O3:Ga2O3 (96:4 weight %)/Pd structure depending on the thickness and sizes of film grains was studied. We revealed technological regimes of sputtering providing fabrication of films with the best parameters.
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页码：86 / 92
页数：6
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