HPHT single crystal diamond type IIB growth sector influence on the secondary electron emission phenomenon

被引：1
作者：
Sadovoy V. [1 ]
Blank V. [1 ,2 ,3 ]
Teteruk D. [1 ]
Terentiev S. [1 ]
Kornilov N. [1 ]
机构：
[1] Technological Institute for Superhard and Novel Carbon Materials (TISNCM), Troitsk, 142190, Moscow
[2] Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Moscow oblast
[3] National University of Science and Technology MISiS, Moscow
来源：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques | 2017年 / 11卷 / 5期
关键词：
diamond; luminescence; scanning electron microscopy (SEM);
D O I：
10.1134/S1027451017050366
中图分类号：
学科分类号：
摘要：
Secondary electron emission (SEE) coefficient correlation with (100) synthetic HPHT-grown single crystal diamonds type IIa and type IIb growth sectors was investigated. SEE coefficient quantitative measurements were carried out for various growth sectors: the highest magnitudes were revealed for (100), (311) and {110} growth sectors, but {111} growth sectors have SEE coefficient 4‒6 times lower in comparison with mentioned above for both investigated crystal types. The SEE coefficient dependence of primary beam energy is non-standard for all growth sectors: SEE coefficient goes up with primary beam energy increasing. These results are very important for diamond microelectronics as various growth sectors utilization considerably changes output characteristics. © 2017, Pleiades Publishing, Ltd.
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页码：1101 / 1107
页数：6
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