Crosstalk Modeling of Small-Pitch Two-Color HgCdTe Photodetectors

被引:0
作者
J.G.A. Wehner
E.P.G. Smith
W. Radford
C.L. Mears
机构
[1] Raytheon Vision Systems,
来源
Journal of Electronic Materials | 2012年 / 41卷
关键词
HgCdTe; crosstalk; small pitch; FEM;
D O I
暂无
中图分类号
学科分类号
摘要
This paper investigates crosstalk in two-color HgCdTe detectors. It is particularly concerned with crosstalk in small-pitch detectors, and investigates pixel pitches from 6 μm to 20 μm using a finite-element modeling approach. It is found that crosstalk is above 20% at these pitches for simple layer designs, and can be controlled by layer design to ~5% to 10% for pitches of 12 μm to 20 μm. Smaller pitches and lower crosstalk require full mesa reticulation.
引用
收藏
页码:2925 / 2927
页数:2
相关论文
共 28 条
  • [1] de Lyon TJ(1998)undefined J. Vac. Sci. B 16 1321-undefined
  • [2] Vigil JA(1992)undefined Appl Phys. Lett. 91 666-undefined
  • [3] Jensen JE(1985)undefined IEEE Trans. Electron Dev. 32 1584-undefined
  • [4] Wu OK(1991)undefined IEEE Trans. Electron Dev. 38 1792-undefined
  • [5] Johnson JL(1999)undefined J. Electron. Mater. 28 617-undefined
  • [6] Patten EA(1982)undefined J. Vac. Sci. 21 215-undefined
  • [7] Kosai K(undefined)undefined undefined undefined undefined-undefined
  • [8] Venzor G(undefined)undefined undefined undefined undefined-undefined
  • [9] Lee V(undefined)undefined undefined undefined undefined-undefined
  • [10] Johnson SM(undefined)undefined undefined undefined undefined-undefined