Silicon and oxygen synergistic effects for the discovery of new high-performance nonfullerene acceptors

被引:0
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作者
Ying Qin
Hui Chen
Jia Yao
Yue Zhou
Yongjoon Cho
Yulin Zhu
Beibei Qiu
Cheng-Wei Ju
Zhi-Guo Zhang
Feng He
Changduk Yang
Yongfang Li
Dongbing Zhao
机构
[1] Nankai University,State Key Laboratory and Institute of Elemento
[2] Southern University of Science and Technology,Organic Chemistry, College of Chemistry
[3] Beijing University of Chemical Technology,Shenzhen Grubbs Institute and Department of Chemistry
[4] Ulsan National Institute of Science and Technology (UNIST),State Key Laboratory of Chemical Resource Engineering, Beijing Advanced Innovation Center for Soft Matter Science and Engineering
[5] Institute of Chemistry,Department of Energy Engineering, School of Energy and Chemical Engineering, Perovtronics Research Center, Low Dimensional Carbon Materials Center
[6] Chinese Academy of Sciences,Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids
来源
Nature Communications | / 11卷
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摘要
In organic electronics, an aromatic fused ring is a basic unit that provides π-electrons to construct semiconductors and governs the device performance. The main challenge in developing new π-skeletons for tuning the material properties is the limitation of the available chemical approach. Herein, we successfully synthesize two pentacyclic siloxy-bridged π-conjugated isomers to investigate the synergistic effects of Si and O atoms on the geometric and electronic influence of π-units in organic electronics. Notably, the synthesis routes for both isomers possess several advantages over the previous approaches for delivering conventional aromatic fused-rings, such as environmentally benign tin-free synthesis and few synthetic steps. To explore their potential application as photovoltaic materials, two isomeric acceptor–donor–acceptor type acceptors based on these two isomers were developed, showing a decent device efficiency of 10%, which indicates the great potential of this SiO-bridged ladder-type unit for the development of new high-performance semiconductor materials.
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