Study of Thermal Conductivity of Materials Based on Silicon Carbide and Silicon Nitride

被引:1
|
作者
Perevislov S.N. [1 ]
Markov M.A. [2 ]
Kuznetsov Y.A. [3 ]
Kravchenko I.N. [4 ,5 ]
Krasikov A.V. [2 ]
机构
[1] Institute of Chemistry of Silicates named after I.V. Grebenshchikov of the Russian Academy of Sciences, St. Petersburg
[2] National Research Center “Kurchatov Institute”—CRISM “Prometey”, St. Petersburg
[3] Federal State Budgetary Educational Institution of Higher Education “Oryol State Agrarian University named after N.V. Parakhina”, Orel
[4] Federal State Budgetary Educational Institution of Higher Education “Russian State Agrarian University— Moscow Agricultural Academy named after K.A. Timiryazev”, Moscow
[5] A.A. Blagonravov Mechanical Engineering Institute of the Russian Academy of Sciences, Moscow
关键词
liquid-phase sintering; reaction sintering; silicon carbide; silicon nitride; thermal conductivity;
D O I
10.3103/S0967091223090115
中图分类号
学科分类号
摘要
Abstract: This paper presents the temperature dependences of the thermal conductivity of materials based on silicon carbide and silicon nitride, obtained by different methods. Thermal conductivity of silicon carbide materials obtained by reaction (SiSiC) and liquid-phase (LPSSiC) sintering, as well as silicon nitride materials obtained by liquid-phase sintering (SSN) has been studied. The dependences of the thermal conductivity coefficient on density, porosity and oxide additive content (for LPSSiC and SSN materials) are given. © 2023, Allerton Press, Inc.
引用
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页码:752 / 760
页数:8
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