Study of Thermal Conductivity of Materials Based on Silicon Carbide and Silicon Nitride

被引:1
|
作者
Perevislov S.N. [1 ]
Markov M.A. [2 ]
Kuznetsov Y.A. [3 ]
Kravchenko I.N. [4 ,5 ]
Krasikov A.V. [2 ]
机构
[1] Institute of Chemistry of Silicates named after I.V. Grebenshchikov of the Russian Academy of Sciences, St. Petersburg
[2] National Research Center “Kurchatov Institute”—CRISM “Prometey”, St. Petersburg
[3] Federal State Budgetary Educational Institution of Higher Education “Oryol State Agrarian University named after N.V. Parakhina”, Orel
[4] Federal State Budgetary Educational Institution of Higher Education “Russian State Agrarian University— Moscow Agricultural Academy named after K.A. Timiryazev”, Moscow
[5] A.A. Blagonravov Mechanical Engineering Institute of the Russian Academy of Sciences, Moscow
关键词
liquid-phase sintering; reaction sintering; silicon carbide; silicon nitride; thermal conductivity;
D O I
10.3103/S0967091223090115
中图分类号
学科分类号
摘要
Abstract: This paper presents the temperature dependences of the thermal conductivity of materials based on silicon carbide and silicon nitride, obtained by different methods. Thermal conductivity of silicon carbide materials obtained by reaction (SiSiC) and liquid-phase (LPSSiC) sintering, as well as silicon nitride materials obtained by liquid-phase sintering (SSN) has been studied. The dependences of the thermal conductivity coefficient on density, porosity and oxide additive content (for LPSSiC and SSN materials) are given. © 2023, Allerton Press, Inc.
引用
收藏
页码:752 / 760
页数:8
相关论文
共 50 条
  • [41] SINTERING AND HIPPING OF SILICON-NITRIDE SILICON-CARBIDE COMPOSITE-MATERIALS
    GREIL, P
    PETZOW, G
    TANAKA, H
    CERAMICS INTERNATIONAL, 1987, 13 (01) : 19 - 25
  • [42] Thermal Conductivity of Single Layer Graphene Supported on Silicon Nitride/Silicon Substrates
    Bin Kashem, Md. Tashfiq
    Dewan, Monzurul Islam
    Subrina, Samia
    2015 IEEE INTERNATIONAL WIE CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (WIECON-ECE), 2015, : 463 - 466
  • [43] PROPERTIES OF MATERIALS BASED ON SILICON CARBIDE
    Shkarupa, I. L.
    Plyasunkova, L. A.
    Shkarupa, M. I.
    Klimov, D. A.
    REFRACTORIES AND INDUSTRIAL CERAMICS, 2009, 50 (03) : 224 - 226
  • [44] Properties of materials based on silicon carbide
    I. L. Shkarupa
    L. A. Plyasunkova
    M. I. Shkarupa
    D. A. Klimov
    Refractories and Industrial Ceramics, 2009, 50 : 224 - 226
  • [45] Effect of grain growth on the thermal conductivity of silicon nitride
    Hirosaki, Naoto
    Okamoto, Yusuke
    Ando, Motohide
    Munakata, Fumio
    Akimune, Yoshi
    Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan, 1996, 104 (1205): : 49 - 53
  • [46] THE INVESTIGATION OF THERMAL-CONDUCTIVITY OF SILICON-NITRIDE
    PELETSKII, VE
    HIGH TEMPERATURE, 1993, 31 (05) : 668 - 670
  • [47] Thermal conductivity of silicon nitride membranes is not sensitive to stress
    Ftouni, Hossein
    Blanc, Christophe
    Tainoff, Dimitri
    Fefferman, Andrew D.
    Defoort, Martial
    Lulla, Kunal J.
    Richard, Jacques
    Collin, Eddy
    Bourgeois, Olivier
    PHYSICAL REVIEW B, 2015, 92 (12)
  • [48] Thermal conductivity of pressureless sintered silicon nitride materials with LiYO2 additive
    Matovic, B
    Rixecker, G
    Golczewski, J
    Aldinger, F
    SCIENCE OF SINTERING, 2004, 36 (01) : 3 - 9
  • [49] Effect of grain growth on the thermal conductivity of silicon nitride
    Hirosaki, N
    Okamoto, Y
    Ando, M
    Munakata, F
    Akimune, Y
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1996, 104 (01) : 49 - 53
  • [50] A Tough Silicon Nitride Ceramic with High Thermal Conductivity
    Zhou, You
    Hyuga, Hideki
    Kusano, Dai
    Yoshizawa, Yu-ichi
    Hirao, Kiyoshi
    ADVANCED MATERIALS, 2011, 23 (39) : 4563 - +