A Linear CMOS Voltage-to-Current Converter

被引:0
作者
Roger Yubtzuan Chen
Seng-Fong Lin
Ming-Shian Wu
机构
[1] Electronics Engineering Department,
[2] National Yunlin University of Science and Technology,undefined
[3] 123 University Road,undefined
[4] sec. 3,undefined
[5] Doulio,undefined
来源
Circuits, Systems and Signal Processing | 2006年 / 25卷
关键词
Complementary Metal Oxide Semiconductor; Total Harmonic Distortion; PMOS Transistor; Current Converter; Complementary Metal Oxide Semiconductor Technology;
D O I
暂无
中图分类号
学科分类号
摘要
An improved complementary metal oxide semiconductor (CMOS) voltage-to-current converter is presented. PMOS transistors are employed in the resistor-replacement and voltage-level shifting of the proposed converter to avoid the body effect. To accurately annihilate the nonlinear voltage terms, a better modeling of the drain-to-source current of the MOS transistor operating in the linear region is essential and is adopted. Specifically, the substrate-bias effect of the MOS transistor is treated more accurately in our design. Consequently, the nonlinearity of the large-signal transconductance of the converter is reduced. The voltage-to-current converter is designed and fabricated in a 0.35 μm CMOS technology. The fabricated circuit occupies an area of 267 μm × 197 μm (≈0.053 mm2) and dissipates 3.92 mW from a 3.3 V supply. The measured and simulated data are in good agreement. For a 1 VP-P input voltage, the measured total harmonic distortion (THD) of the output current is less than 1.2%.
引用
收藏
页码:497 / 509
页数:12
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