Effects of random number and location of the nanosized metal grains on the threshold voltage variability of silicon gate-all-around nanowire n-type metal-oxide-semiconductor field-effect transistors

被引：0
作者：
Wen-Li Sung
Yiming Li
机构：
[1] National Chiao Tung University,Parallel and Scientific Computing Laboratory
[2] National Chiao Tung University,Institute of Communications Engineering
[3] National Chiao Tung University,Department of Electrical and Computer Engineering
[4] National Chiao Tung University,Center for mmWave Smart Radar System and Technologies
来源：
Journal of Computational Electronics | 2020年 / 19卷
关键词：
Work function fluctuation; Random number; Random position; Gate-all-around; Nanowire MOSFETs; Threshold voltage; Variability; Metal grain;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this study, the effect of the metal grain number (MGN) and metal grain location (MGL) with a low/high work function (WK) on the variability of the threshold voltage (σVth) of silicon gate-all-around nanowire n-type metal-oxide-semiconductor field-effect transistors was examined by using an experimentally validated cuboid grain method. For the effect of the MGN, σVth induced by WK fluctuations strongly depended on the MGN for the same metal-gate area. For the effect of the MGL, metal grains with a low WK near the source (S) side are crucial for the magnitude of σVth. Therefore, for the weighted superposition of the WK with each metal grain, the number of metal grains with a low WK near the S side may alter the distribution of Vth and dominate the magnitude of σVth.
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页码：1478 / 1484
页数：6
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