Investigation of Inhomogeneites in Epitaxial AlxGa1−xN Layers Grown on Sapphire

被引：0
|
作者：
Vladimir V. Tretyakov
Sergey A. Rukolaine
Alexandr S. Usikov
Serge V. Makarov
机构：
[1] A.F. Ioffe Physico-Technical Institute,
[2] St. Petersburg,undefined
[3] Russia,undefined
来源：
Microchimica Acta | 2000年 / 132卷
关键词：
Key words: EPMA; depth profiling; cathodoluminescence; dimple grinding; AlGaN epitaxial layers.;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
 Procedures for the preparation of bevels and the determination of their geometrical parameters have been developed. Using these procedures study of compositional and optical spatially resolved inhomogeneities of AlxGa1−xN layers grown on (0001) sapphire have been studied by EPMA and cathodolu-minescence. It has been found that the nonuniform distribution in depth of Al in epitaxial layers grown under constant conditions is connected with presence of stresses in the layer.
引用
收藏
页码：361 / 364
页数：3
相关论文
共 50 条
  • [21] Localized biexcitons in AlxGa1-xN ternary alloy epitaxial layers
    Yamada, Y
    Sasaki, C
    Ueki, Y
    Taguchi, T
    Tanaka, S
    Nakagawa, Y
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 240 (02): : 376 - 379
  • [22] Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers
    Bergmann, MJ
    Özgür, Ü
    Casey, HC
    Everitt, HO
    Muth, JF
    APPLIED PHYSICS LETTERS, 1999, 75 (01) : 67 - 69
  • [23] Thermal conductivity of AlxGa1-xN (0 ≤ x ≤ 1) epitaxial layers
    Tran, Dat Q.
    Carrascon, Rosalia D.
    Iwaya, Motoaki
    Monemar, Bo
    Darakchieva, Vanya
    Paskov, Plamen P.
    PHYSICAL REVIEW MATERIALS, 2022, 6 (10)
  • [24] Characterization of GaN epitaxial layers on SiC substrates with AlxGa1-xN buffer layers
    Lin, CF
    Cheng, HC
    Feng, MS
    Chi, GC
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3): : 25 - 28
  • [25] Characterization of GaN epitaxial layers on SiC substrates with AlxGa1-xN buffer layers
    Natl Chiao Tung Univ, Hsinchu, Taiwan
    Mater Sci Eng B Solid State Adv Technol, 1-3 (25-28):
  • [26] Band structure and spatial charge distribution in AlxGa1−xN
    V. G. Deibuk
    A. V. Voznyi
    M. M. Sletov
    Semiconductors, 2000, 34 : 35 - 39
  • [27] Features of optical properties of AlxGa1−xN solid solutions
    V. G. Deibuk
    A. V. Voznyi
    M. M. Sletov
    Semiconductors, 2002, 36 : 398 - 403
  • [28] Refractive index study of AlxGa1-xN films grown on sapphire substrates
    Sanford, NA
    Robins, LH
    Davydov, AV
    Shapiro, A
    Tsvetkov, DV
    Dmitriev, AV
    Keller, S
    Mishra, UK
    DenBaars, SP
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) : 2980 - 2991
  • [29] Refractive index study of AlxGa1-xN films grown on sapphire substrates
    Sanford, N.A. (sanford@boulder.nist.gov), 1600, American Institute of Physics Inc. (94):
  • [30] Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy
    Kim, JW
    Son, CS
    Choi, IH
    Park, YK
    Kim, YT
    Ambacher, O
    Stutzmann, M
    JOURNAL OF CRYSTAL GROWTH, 2000, 208 (1-4) : 37 - 41
12345