Growth and real structure of diamond films synthesized on polycrystalline tungsten substrates

被引：0

作者：

V. D. Aleksandrov

I. V. Sel’skaya

机构：

[1] Donbass State Academy of Civil Engineering and Architecture,

来源：

Crystallography Reports | 2004年 / 49卷

关键词：

Hydrogen; Growth Rate; Methane; Tungsten; Dislocation Density;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

X-ray diffraction studies of diamond films obtained by chemical transport reactions at the concentrations of 2% methane and 98% hydrogen under pressures of 10.7 and 21.3 kPa showed that they are textured. The character of the texture depends on the substrate temperature. The films have {110}, {311}, or double {110} + {311} textures. It is established that the dependence of the growth rate of diamond films on the substrate temperature has maxima. The diamond films are finely dispersed and are characterized by pronounced micro-deformations and high dislocation densities. The temperature dependence of the growth rate correlates with the parameters of the real structure of the films.

引用

页码：851 / 854

页数：3