Recombination of charge carriers in dislocation-free silicon containing growth microdefects of various types

被引：0
|
作者：
L. A. Kazakevich
P. F. Lugakov
机构：
[1] A. N. Sevchenko Scientific Research Institute of Applied Physics Problems,
[2] Belorussian Agrarian Technical State University,undefined
来源：
Semiconductors | 1998年 / 32卷
关键词：
Silicon; Recombination; Charge Carrier; Magnetic Material; Electromagnetism;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The temperature and injection dependence of the charge-carrier lifetime in dislocation-free n-Si is analyzed, making it possible to characterize the recombination activity of various types of microdefects. The parameters of the primary recombination centers with A-and B-type microdefects have been found.
引用
收藏
页码：117 / 119
页数：2
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