Recombination of charge carriers in dislocation-free silicon containing growth microdefects of various types

被引：0

作者：

L. A. Kazakevich

P. F. Lugakov

机构：

[1] A. N. Sevchenko Scientific Research Institute of Applied Physics Problems,

[2] Belorussian Agrarian Technical State University,undefined

来源：

Semiconductors | 1998年 / 32卷

关键词：

Silicon; Recombination; Charge Carrier; Magnetic Material; Electromagnetism;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The temperature and injection dependence of the charge-carrier lifetime in dislocation-free n-Si is analyzed, making it possible to characterize the recombination activity of various types of microdefects. The parameters of the primary recombination centers with A-and B-type microdefects have been found.

引用

页码：117 / 119

页数：2

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