Rapid crystallization of silicon films using Joule heating of metal films

50-nm thick amorphous silicon films formed on glass substrates were crystallized by rapid Joule heating induced by an electrical current flowing in 100-nm-thick Cr strips formed adjacently to 200-nm-thick SiO2 intermediate layers. 3-μs-pulsed voltages were applied to the Cr strips. Melting of the Cr strips caused a high Joule heating intensity of about 1×106 W/cm2. Raman scattering measurements revealed complete crystallization of the silicon films at a Joule heating energy of 1.9 J/cm2 via the SiO2 intermediate layer. Transmission electron microscopy measurements confirmed a crystalline grain size of 50–100 nm. 1-μm-long crystalline grain growth was also observed just beneath the edge of the Cr strips. The electrical conductivity increased from 10-5 S/cm to 0.3 S/cm for 7×1017-cm-3-phosphorus-doped silicon films because of activation of the phosphorus atoms because of crystallization. The numerical analysis showed a density of localized defect states at the mid gap of 8.0×1017 cm-3. Oxygen plasma treatment at 250 °C and 100 W for 5 min reduced the density of the defect states to 2.7×1017 cm-3.