All-optical AND gate based on Raman effect in silicon-on-insulator waveguide

被引：0
作者：
Vittorio M. N. Passaro
Francesco de Passaro
机构：
[1] Politecnico di Bari,Dipartimento di Elettrotecnica ed Elettronica
[2] Politecnico di Bari,Dipartimento di Ingegneria dell’Ambiente e per lo Sviluppo Sostenibile
来源：
Optical and Quantum Electronics | 2006年 / 38卷
关键词：
integrated optics; nonlinear optics; silicon-on-insulator technology; Raman scattering; all-optical gate;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
An all-optical AND gate based on Raman effect in silicon-on-insulator technology is proposed. Stimulated Raman scattering, two photon absorption, free carrier dispersion, self and cross phase modulation induced by Kerr effect, walk-off and pump depletion are included in the complete mathematical model, avoiding any a priori-assumption. Finally, the design criteria to optimize the device performance are presented.
引用
收藏
页码：877 / 888
页数：11
相关论文
共 38 条
[1]  
Aitchison J.S.(1995)undefined Opt. Lett. 20 698-undefined
[2]  
Villeneve A.(1992)undefined Electron. Lett. 28 1090-undefined
[3]  
Stegeman G.I.(2004)undefined Opt. Express 12 4094-undefined
[4]  
Al-Hemyari K.(1993)undefined Opt. Eng. 32 695-undefined
[5]  
Aitchison J.S.(2006)undefined IEEE J. Sel. Top. Quantum Electron. 12 412-undefined
[6]  
Ironside C.N.(2000)undefined IEEE J. Quantum Electron. 6 143-undefined
[7]  
Kennedy G.T.(2006)undefined IEEE J. Lightwave Technol. 24 2920-undefined
[8]  
Grant R.S.(1987)undefined IEEE J. Quantum Electron. QE- 23 123-undefined
[9]  
Sibbett W.(2004)undefined Opt. Express 12 4437-undefined
[10]  
Boyraz O.(1985)undefined Electron. Lett. 21 26-undefined
1234