The influence of electrically inactive impurities on the formation of donor centers in silicon layers implanted with erbium

被引：0
作者：
O. V. Aleksandrov
A. O. Zakhar’in
N. A. Sobolev
Yu. A. Nikolaev
机构：
[1] State Electrotechnical University,Ioffe Physicotechnical Institute
[2] Russian Academy of Sciences,undefined
来源：
Semiconductors | 2000年 / 34卷
关键词：
Oxygen; Nitrogen; Silicon; Fluorine; Magnetic Material;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The influence of the additional implantation of electrically inactive impurities of carbon, oxygen, nitrogen, and fluorine on the formation of donor centers in silicon implanted with erbium was studied. It is shown that additional implantation brings about an increase in the concentration of donor centers formed during anneals. Variation in the concentration of donor centers depends on the type of introduced impurity. The results indicate that electrically inactive impurities are involved in the formation of donor centers.
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页码：510 / 513
页数：3
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