Coulomb blockade under conditions of inelastic tunneling

被引：0
作者：
L. V. Litvin
V. A. Kolosanov
D. G. Baksheev
V. A. Tkachenko
A. L. Aseev
机构：
[1] Russian Academy of Sciences,Institute of Semiconductor Physics, Siberian Division
来源：
Journal of Experimental and Theoretical Physics Letters | 2000年 / 72卷
关键词：
73.23.Hk; 73.40.Gk; 73.40.Rw;
D O I：
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学科分类号：
摘要：
It is found that single-electron current oscillations in the drain-gate characteristics of a single-electron transistor fabricated by the step-edge cutoff process, as compared to a conventional single-electron transistor, are damped several times slower and do not change their phase by π as the source-drain voltage increases. This is explained by the strong nonlinearity of the current-voltage characteristics of tunnel junctions, which is caused by the inelastic character of tunneling.
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页码：264 / 268
页数：4
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