Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping

We present the results of experimental studies of internal quantum efficiency of photoluminescence of blue LED heterostructures based on multiple InxGa1–xN/GaN quantum wells with short-period InyGa1–yN/GaN superlattices containing small amounts of In at high levels of optical pumping. Introduction of an InyGa1–yN/GaN superlattice from the side of the n-region of a LED InxGa1–xN/GaN heterostructure allows to increase the value of its internal quantum efficiency presumably by reducing the quantum-confined Stark effect and Auger recombination rate.