Influence of the Si/SiO2 interface on the charge carrier density of Si nanowires

被引：0
|
作者：
V. Schmidt
S. Senz
U. Gösele
机构：
[1] Max Planck Institute of Microstructure Physics,
来源：
Applied Physics A | 2007年 / 86卷
关键词：
Critical Radius; Interface Trap; Charge Carrier Density; Oxide Charge; Full Depletion;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The electrical properties of Si nanowires covered by a SiO2 shell are influenced by the properties of the Si/SiO2 interface. This interface can be characterized by the fixed oxide charge density Qf and the interface trap level density Dit. We derive expressions for the effective charge carrier density in silicon nanowires as a function of Qf, Dit, the nanowire radius, and the dopant density. It is found that a nanowire is fully depleted when its radius is smaller than a critical radius acrit. An analytic expression for acrit is derived.
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页码：187 / 191
页数：4
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