Effect of Lattice Defects on the Electromigration-Induced Instability of the Interface between Joined Conductive Materials

被引：0

作者：

Makhviladze T.M. ^{[1
]}

Sarychev M.E. ^{[1
]}

机构：

[1] Valiev Institute of Physics and Technology, Russian Academy of Sciences, Moscow

来源：

Russian Microelectronics | 2022年 / 51卷 / 6期

关键词：

diffusion; effective charge; electromigration; interface; lattice defects;

D O I：

10.1134/S1063739722700160

中图分类号：

学科分类号：

摘要：

Abstract: A model is developed for the description of the effect of nonequilibrium crystal defects on the kinetics of instability of the shape of the boundary (interface) between layers of joined conductive materials, which arises due to the electromigration of ions in these materials. The mechanism of the origination of instability takes into account the action of mechanical stresses in the system, including the stresses due to the differing materials of the substrate and the film deposited on it (residual stresses). General relationships describing the dependence of the conditions of the origination of the instability of a spatially periodic perturbation for an initially flat interface and the characteristic times of its development on concentrations of nonequilibrium lattice defects in volumes of the joined materials are obtained. For more accurate analysis and estimations, two specific cases are considered: first, the interface is formed by joining the same two materials and, second, the joined materials are substantially different in such a way that the diffusion mobility in one of them may be neglected. © 2022, Pleiades Publishing, Ltd.

引用

页码：426 / 434

页数：8

共 14 条

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