MOCVD Growth of InN on Si(111) with Various Buffer Layers

被引：0

作者：

C.C. Huang

R.W. Chuang

S.J. Chang

J.C. Lin

Y.C. Cheng

W.J. Lin

机构：

[1] National Cheng Kung University,Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center

[2] Chung Shan Institute of Science and Technology,Materials and Electro

来源：

Journal of Electronic Materials | 2008年 / 37卷

关键词：

InN; MOCVD; buffer layer; XRD; mobility;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We report the growth of InN by metalorganic chemical vapor deposition on Si(111) substrates. It was found that the sharpest InN(002) x-ray diffraction peak could be achieved from the sample prepared on a complex buffer layer that consists of a low-temperature AlN, a graded AlxGa1−xN (x = 1 → 0), and a high-temperature GaN. The resultant mobility of 275 cm2/V s thus obtained was 75% larger than that of the InN prepared on a single LT-AlN buffer layer only.

引用

页码：1054 / 1057

页数：3

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